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This work reports the impact of hetero gate oxide and dielectric pocket on the performance of conventional TFET. The conventional TFET has been optimized by introducing hetero gate oxide of HfO2-SiO2 and dielectric air-pocket. Both these approaches improve the lateral electric field at the source-channel interface and weakens the lateral electric field at the drain-channel interface. Hence, the ON-current is enhanced and OFF-current is reduced. At last, the optimized value of work-function of the gate metal has been obtained at 4.3 eV. The TCAD simulation results show a significant increase in ON-current (ION = 10.24 × 10−4) and reduction in leakage current (IOFF = 9.659 × 10−17). The value of ION/IOFF ratio and subthreshold swing was found to be 1.06 × 1013 and 11.776 mV/decade respectively that confirms a considerable improvement in the performance of the proposed TFET structure. The transconductance for the proposed device structure was found to be 1.935mS. These improvements confirm that the proposed device DP-HGO-DG-TFET is suitable for high frequency and low power applications.

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Impact of Gate Oxide and Dielectric Pocket on Performance Enhancement of Hetero Gate Oxide TFETs

  • 会议论文

  • 发表日期：

    2025年

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  • Prasenjit Mahato,
  • Kavindra Kumar Kavi,
  • Sukanta Kumar Swain,
  • Abhishek Raj,
  • Shashi Kant Sharma

摘要

This work reports the impact of hetero gate oxide and dielectric pocket on the performance of conventional TFET. The conventional TFET has been optimized by introducing hetero gate oxide of HfO2-SiO2 and dielectric air-pocket. Both these approaches improve the lateral electric field at the source-channel interface and weakens the lateral electric field at the drain-channel interface. Hence, the ON-current is enhanced and OFF-current is reduced. At last, the optimized value of work-function of the gate metal has been obtained at 4.3 eV. The TCAD simulation results show a significant increase in ON-current (ION = 10.24 × 10−4) and reduction in leakage current (IOFF = 9.659 × 10−17). The value of ION/IOFF ratio and subthreshold swing was found to be 1.06 × 1013 and 11.776 mV/decade respectively that confirms a considerable improvement in the performance of the proposed TFET structure. The transconductance for the proposed device structure was found to be 1.935mS. These improvements confirm that the proposed device DP-HGO-DG-TFET is suitable for high frequency and low power applications.