Vanadium dioxide (VO2) is a phase transition material (PTM), which shows an insulator-to-metal transition (IMT) along with a large change in refractive index at infrared wavelengths. In this work, we demonstrate wafer-scale integration of VO2 on a 2-inch-diameter silicon substrate using a low-thermal-budget atmospheric oxidation process (APTO). We show uniform resistance and infrared switching of large-area VO2 using temperature-dependent four-point probe resistance measurements and long-wave infrared camera imaging, respectively. Using this platform, we demonstrate an adaptive camouflage approach of converting a targeting image into a non-targeting image by temperature using patterned VO2 on the silicon wafer. We extract emissivity change of the structure and justify the results using transfer matrix simulations. This demonstration of large-area adaptive camouflage shows promising opportunities for VO2-based camouflage and thermal management applications.