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Several material systems, including AlGaAs/GaAs, AlGaN/GaN, InP/AlInAs/InGaAs, GaAs/AlInAs/InGaAs, etc., may be employed to develop HEMTs. HEMTs with low bandgap channel materials are most suitable for high-speed, low-power applications, whereas those with wide bandgap channel materials are excellent for high-power applications. Several industries have demonstrated many circuits with varying levels of complexity using HEMTs. According to survey report published by Spherical Insights & Consulting, the global size of HEMT market is expected to reach US$7.51 billion by 2022, and the global high electron mobility transistor market trade is expected to reach US$16.82 billion by 2032. A lot of research has been done on the development of high power electronic devices (HEMTs) because they are a promising alternative to conventional transistors, more promising and used in wireless applications. HEMT devices are receiving consideration for their greater electron transport and are competing with traditional field‐effect transistors (FETs) and replacing them with outstanding performance at very larger frequency, enhanced power density and improved proficiency. This chapter highlights the applications of GaN HEMTs for RF electronics & digital electronics, integrated circuits and quantum computing applications.

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Recent Developments and Applications of High Electron Mobility Transistors

  • 章节

  • 发表日期：

    2025年

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  • Kalyan Biswas,
  • Rachita Ghoshhajra,
  • Angsuman Sarkar

摘要

Several material systems, including AlGaAs/GaAs, AlGaN/GaN, InP/AlInAs/InGaAs, GaAs/AlInAs/InGaAs, etc., may be employed to develop HEMTs. HEMTs with low bandgap channel materials are most suitable for high-speed, low-power applications, whereas those with wide bandgap channel materials are excellent for high-power applications. Several industries have demonstrated many circuits with varying levels of complexity using HEMTs. According to survey report published by Spherical Insights & Consulting, the global size of HEMT market is expected to reach US$7.51 billion by 2022, and the global high electron mobility transistor market trade is expected to reach US$16.82 billion by 2032. A lot of research has been done on the development of high power electronic devices (HEMTs) because they are a promising alternative to conventional transistors, more promising and used in wireless applications. HEMT devices are receiving consideration for their greater electron transport and are competing with traditional field‐effect transistors (FETs) and replacing them with outstanding performance at very larger frequency, enhanced power density and improved proficiency. This chapter highlights the applications of GaN HEMTs for RF electronics & digital electronics, integrated circuits and quantum computing applications.