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The performance, stability, and reliability of GaN transistors are affected by charge trapping effects, thus calling for dependable characterization and modelling techniques for these phenomena. In this work, after a review of the different GaN deep levels and a description of the possible compact and TCAD physical modelling approaches that can be adopted to model charge trapping effects, we present a selection of relevant cases where modelling has substantially contributed to the physical understanding of these phenomena. Device technologies taken into consideration comprehend both GaN RF and GaN power transistors. Analyzed charge trapping effects include barrier, surface, and buffer trap-related current collapse effects, dynamic RON effects, as well as threshold-voltage instabilities.

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Physical Modelling of Charge Trapping Effects

  • 章节

  • 发表日期：

    2025年

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  • Matteo Buffolo,
  • Carlo De Santi,
  • Gaudenzio Meneghesso,
  • Matteo Meneghini,
  • Enrico Zanoni,
  • Nicolò Zagni,
  • Marcello Cioni,
  • Alessandro Chini,
  • Francesco Maria Puglisi,
  • Paolo Pavan,
  • Giovanni Verzellesi

摘要

The performance, stability, and reliability of GaN transistors are affected by charge trapping effects, thus calling for dependable characterization and modelling techniques for these phenomena. In this work, after a review of the different GaN deep levels and a description of the possible compact and TCAD physical modelling approaches that can be adopted to model charge trapping effects, we present a selection of relevant cases where modelling has substantially contributed to the physical understanding of these phenomena. Device technologies taken into consideration comprehend both GaN RF and GaN power transistors. Analyzed charge trapping effects include barrier, surface, and buffer trap-related current collapse effects, dynamic RON effects, as well as threshold-voltage instabilities.