MoS2 for Nanoelectronic Device Applications (Transistor, Sensor, Photodetector)
摘要
The atomically thin 2D MoS2 nanosheet has recently been attracting widespread attention due to tunable, wide, and direct bandgap in single layer. This has attracted many technological applications of nano-MoS2 in electronic devices such as sensor, transistor, and photodetector. Most research works reported in the literature on layered chalcogenides are concentrated on single atomic layers. However, it is uncertain if single-layer units are the best model structures for device performance. This chapter has summarized various aspects of MoS2 sheet-based nanoelectronic devices ranging from single-to-multiple layers.