MoS2 Heterostructures: Synthesis, Characterizations, and Applications
摘要
This chapter summarizes some of the major findings on MoS2 heterostructures. Major emphasis is given on wide variety of synthetic protocols utilized to fabricate atomically clean heterointerfaces; principal characterization techniques deployed to spatially locate and affirm heterostructure formation; and their application in photodetectors, photovoltaics, and transistors. In the first part, we discuss various synthesis routes like micromechanical cleavage, chemical vapor deposition, and solution routes and their collaborative utilization for heterostructure fabrication. To delve into evolution of spatial, electrical, as well as optical characteristics upon heterostructure formation, we discuss microscopic and spectroscopic characterization techniques such as optical microscopy, atomic force microscopy (AFM), scanning tunneling microscopy (STM) and spectroscopy (STS), and transmission electron microscopy (TEM) in detail in the second part. Among the multitude of applications demonstrated for MoS2 heterostructures, we briefly discuss their utilization in photodetectors, photovoltaics, and transistors. This chapter provides an overview of heterostructures in general from their synthesis to characterization and finally employability in modern-day electronics for beginners and also provides up-to-date information for researchers working in this area.