Impact of Technology Node on Low Power Analog Performance of AU-TFET: A Quantum-Inspired Study
摘要
For the first time, a quantum-inspired comprehensive study on the low power analog performance of a unique AU-TFET in two distinct technological nodes under the two supply voltages, VDD and VDD/2, has been made in this work. Light is also thrown on the significance of threshold voltage (in the very context of this study) and the method of its extraction. The overall exploration stems from the idea of verifying the orthodox understanding regarding the fact that the down-scaling of a device degrades its analog performance. Interestingly, in this study, it has been found that, unlike the conventional MOSFETs, the aforementioned perception or understanding cannot apply to the projected AU-TFET device in a very simple and straightforward manner.