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Accurate Determination of Excitonic Spectra of Monolayer Selenium—PtS2 Van der Waals Heterostructure

  • Anjana E. Sudheer,
  • D. Murali,
  • Matthias Posselt

摘要

The newly discovered monolayer selenium from group VI elements gains prominence due to its potential application in diverse fields including optoelectronics. In this work we have performed a systematic first principles study on the structural, electronic, linear and nonlinear optical characteristics of selenium Van der Waals (vdW) heterostructure with noble metal chalcogenide PtS2. The GW-Bethe-Salpeter Equation (GW-BSE) approach was used to accurately treat the quasiparticle and excitonic spectra. The optimized heterostructure shows the indirect band gap of 0.82 eV at GGA-PBE level. The newly designed interface shows type II band alignment. GW-BSE absorption spectra show a bound excitonic peak at 1.40 eV as compared with 1.28 eV in monolayer Se. The exciton binding energy of the Se-PtS2 vdW interface is 0.35 eV compared with the 0.45 eV for monolayer Se. The strong excitonic visible light absorption together with the type II band alignment makes the Se-PtS2 vdW heterostucture suitable candidate for the photovoltaic and photocatalytic applications.