Thermal Analysis of IGBT for High-Frequency Inverter
摘要
Thermal modeling of an insulated gate bipolar transistor (IGBT) power module suitable for use in the output of a 20–40 kHz inverter is proposed in this paper. Since, thermal design is an important consideration in any power electronic converter, an optimized design is necessary for efficient thermal management. Along with that high-frequency electrical, thermal, and mechanical stress have additional influence on the heating. This paper considered the derivation of thermal model by an equivalent circuit consisting of heat source and thermal impedances of the IGBT module, and design values and estimation of Safe and reliable operation range of the IGBT module for high frequency output.