Both Resistance Switch and Analog Memory Functions Through Interfacial Proton Control by Gate Electric Field

This chapter introduces analog transistors that mimic the plasticity in biological synapses. The device uses a paraelectric gate material and exhibits non-volatile memory functionality through a structural phase transition between oxide and hydroxyl oxide by applying gate bias. Normally, a transistor using a paraelectric gate insulating film has only a switching function, however, the distinguishing feature of this transistor is the generation of a non-volatile memory effect that the application of an electric field electric of a paraelectric gate allows proton manipulation, that is, it is important that the transition between the metastable states of the insulator HVO2 and the metal VO2 of the channel. The device achieves analog memory functionality by controlling and inducing a reversible crystal phase transition between a higher conductive VO2 structure and a lower conductive HVO2 structure via a paraelectric gate bias, achieving low power consumption. The principle of this analog memory effect holds great promise for applications in neuromorphic engineering.