Electrical Characterization of CMOS 1µ Twin Well Technology Based Designed Diodes
摘要
This work reports an experimental investigation containing the elaboration and electrical characterization phases of different diodes. The elaborated samples, based on CMOS 1 µm twin well technology with double poly double metal, are n+/p-well, p+/n-well and n-well/p-well diodes for different applications such as optoelectronics, and high-power devices. Characterization measurements of current, capacitance, and conductance as a function of bias voltage were carried out. The evaluation of the obtained results shows the efficiency of the technological process and an apparent behavior for each structure that indicates the impact of a design choice on device performance and reliability.