Simulations of Silicon n-on-p Pixel Detectors for HEP Experiments
摘要
Future high-energy physics experiments will require highly segmented pixel sensors of increased geometrical efficiency and the ability of withstanding extremely high radiation damage. In this paper, the performance of an irradiated planar silicon n-on-p sensors with active edge are evaluated with simulations at high fluences using a recent three level trap model for p-type silicon material. TCAD simulation has been used to simulate I–V characteristics and distribution of hole concentration and electric field.