Heterogeneous Integration of 2D Materials with Silicon Complementary Metal Oxide Semiconductor (Si-CMOS) Devices

This chapter conducts a thorough exploration of integrating “two-dimensional (2D) materials” with “silicon (Si) complementary metal oxide semiconductor (Si-CMOS)” devices, with a focus on applications in electronics, photonics, and energy. Various integration strategies are discussed, encompassing the synthesis and characterization of “2D materials”. The chapter scrutinizes critical criteria for material selection compatible with Si-CMOS devices, emphasizing the need for precision. It delves into the intricacies of device fabrication processes and assesses real-world applications. The comprehensive overview, constructed through an extensive literature review, deeply analyzes the current state-of-the-art. From this analysis, integration strategies, including transfer, direct growth, and hybrid techniques, are identified. The chapter highlights the critical importance of precise material selection and thorough characterization to ensure compatibility with Si-CMOS devices. It further examines the existing technology landscape, identifying challenges in research and development. Additionally, the chapter outlines potential directions for advancements in this promising field, providing guidance for upcoming developments.