Other Potential 2-D Materials for CMOS Applications
摘要
New advancements in thin film two-dimensional (2D) materials have resulted in an assortment of intriguing innovative techniques enabling CMOS nanodevices and energy production. The number of devices that focus on non-graphene monolayers has significantly increased due to the novel characteristics and applications arising from two-dimensional confinement. An attempt has been made here to comprehensively describe the present state of the technology and future possibilities for 2D materials other than graphene, which includes an emerging class of transition metal dichalcogenide materials, synthetic boron nitride, and an allotrope of phosphorus known as black phosphorous. Such materials are currently being considered for both high and low-end application areas. The assessment of multiple synthesis approaches with the ability to produce ways of regulated large-scale synthesis is described together with an overview of the structural and physical characteristics of 2D materials. By leveraging the novel qualities resulting from these materials, state-of-the-art applications are also summarized. Such devices would drastically lower device dimensions as well as power consumption, which is required for the development of future sustainable technology.