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Carbon Nanotube FETS: An Alternative for Beyond Si Devices

  • Shailendra K. Tripath

摘要

The fundamental building blocks of IC technology must change due to the physical limitations of device scaling. Emerging nanoelectronics can offer a solution to lower fabrication costs and enables further device size scaling in the midst of current nanotechnology research and development. Modern integrated systems mostly consist of copper/aluminum cables and silicon-based transistors. These transistors and wires might both be changed to carbon nanotube transistors and carbon nanotube wires, respectively. In carbon nanotube field-effect transistors (CNFET), the CNT is used as a transistor component. It appears that a carbon nanotube has taken the role of the silicon-based channel material in a MOS transistor. The carbon nanotube-FET shows the potential characteristics to be exploited in futuristic low-power and high-performance circuit design.