Spin Field-Effect Transistor: For Steep Switching Behavior

With regard to the development of semiconductor technology, SFET becomes an instrument aimed at satisfying the needs in equipment with steep switching characteristics. SFETs utilize the spin degree of freedom for electrons and spin currents unlike in case of FETs that comprise of traditional. In this section, we outline the design principles of the SFET with particular emphasis on its special features that are related to voltage and current waveforms that lead to steep switchings. Instead, leveraging on the same concept of spin injection and manipulation, the SFET switches rapidly between ON and OFF modes. The high intrinsic spin functionality leads to reduced electron scattering resulting in enhanced electron mobility as well as rapid switching speeds. Using the concept of spin property as a basis for electron opens up new way leading to best performances ever witnessed.