Resistive-Gate Field-Effect Transistor: A Potential Steep-Slope Device

The recent development of steep-slope devices offered novel opportunities for voltage scaling beyond the capabilities of CMOS. Steep-slope devices are suggested to improve their performance. Theoretically, steep-slope devices may allow low-voltage operation with acceptable leakage current by switching from the off to on state with a smaller change in gate voltage. This chapter includes ReFET that has been identified as a developing field-effect transistor due to its subthreshold swing of less than 60 mV/dec. Due to the optimization of MOSFET components, ReFET is a better option for upcoming low-power electric applications because the leakage current has decreased by nearly four decades. This chapter also addresses the challenges associated with resistive-gate field-effect transistors, in addition to the opportunities they present. This chapter additionally covers various memory structures, with a particular emphasis on resistive random-access memory. This article includes a review of recent developments in the design of RRAM-based neuromorphic computing circuits inspired by the human brain.