Feedback Field-Effect Transistors/Zero Subthreshold Swing and Zero Impact Ionization FET

Feedback Field-Effect Transistors (FBFETs) function through a positive feedback loop, where electrons and holes in the channel region impact the energy states of the potential barrier and wall. This positive feedback mechanism results in notable characteristics for FBFETs, including an impressive subthreshold swing of approximately 0 mV/decade at 300 K, a high on-/off-current ratio of around 10^10, and a well-defined saturation region. The power consumption in both the turn-on and turn-off states remains remarkably low until the device is actively operating. Furthermore, the hysteresis induced by carriers accumulated in the potential wall allows FBFETs to serve as memory devices. Additionally, FBFETs exhibit the potential to significantly reduce power consumption in neuromorphic devices, by approximately 100 times. This study delves into the analysis of the FBFET's device structure and operational principles, providing a comprehensive overview of its applications.