Introduction to Nanomagnetism and Spintronics

In the previous chapter, the devices essential to implementing spintronics-based neuromorphic computing have been introduced: Spin-Orbit Torque Magnetic Random Access Memory (SOTMRAM), Spin-Orbit-Torque-Driven Domain-Wall device, and Spin Hall Nano-Oscillator (SHNO). In this chapter, we first discuss the commonalities of these devices in terms of their material structure and operating physics. Next, we discuss phenomenological modelling techniques that can capture this physics to a large degree: single-domain model, micromagnetic model, and spin-orbit-torque-driven magnetization dynamics based on Landau–Lifschitz–Gilbert–Slonczewski equations.