Quarter Phase Grating Cavity Showing High Quality Factor in SOI Substrate
摘要
We demonstrate quarter phase grating cavity in SOI Substrate showing High quality factor. Grating period of 290 nm repeated 862 times with a cavity in between of length 145 nm integrated in SOI waveguide was theoretically plotted in MATLAB and the spectral result was compared with Finite Differential Time Domain simulation. The wavelength characteristic of the device showed a cavity resonant wavelength at 1608 nm with 21 pm bandwidth, resulting in the quality factor in the order of 10 \(^4\) .