The rapid evolution of nanoscale technologies presents a challenge for electronic devices to sustain in harsh environments like hostile environments, radiation pollution, etc. Junctionless Field Effect Transistor (JLFET) is one of the kinds of emerging electronic devices that have applications in high switching devices and low-power electronics. The aim of this paper is to study the effect of gamma rays photonic radiation on the performance of JLFET. In this paper, regular SOI based JLFET and high-K oxide layer based JLFET (HL JLFET) have been considered. Further, we have done a 2-D simulation of both devices and observed the photonic irradiation using Sentaurus device simulator. Therefore, it can be concluded that there is a variation in electrical characteristics of JLFET with high-K oxide layer that leads to lower off-stage leakage current and the effect of photonic radiation leads to an increase in drain current as there is an increase in dose rate of HL JLFET.