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Investigation of junctionless transistor (JLT) and dopingless transistor (DLT) demonstrate that DLT suffers less BTBT leakage as compared with JLT. Further, we propose vacuum as gate dielectric in DLT to further diminish BTBT. This novel structure has asymmetric gate oxide comprising HfO \(_{2}\) and vacuum, which results in lesser electric field at channel-drain region and hence further reduction of BTBT leakage current in DLT. Our results show that we get significantly low off state current for proposed device (I \(_{on}\) /I \(_{off}\) \(\sim \) 10 \(^{9}\) ). Vacuum incorporation results in higher immunity against BTBT effect, but it has the limitation of low on state current. Therefore we use the dual material gate (DMG) along with vacuum gate dielectric to improve I \(_{on}\) and I \(_{on}\) /I \(_{off}\) ratio. In addition, we also analyze the effect of temperature on band-to-band tunneling current for different DLT structures.

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Controlling the Band-to-Band Tunneling Effect in Charge Plasma Based Dopingless Transistor

  • 会议论文

  • 发表日期：

    2025年

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  • Nisha Dewagan,
  • Meena Panchore,
  • Ganesh Khekare,
  • Chitraja Rajan,
  • Lokesh Kumar Bramhane

摘要

Investigation of junctionless transistor (JLT) and dopingless transistor (DLT) demonstrate that DLT suffers less BTBT leakage as compared with JLT. Further, we propose vacuum as gate dielectric in DLT to further diminish BTBT. This novel structure has asymmetric gate oxide comprising HfO \(_{2}\) and vacuum, which results in lesser electric field at channel-drain region and hence further reduction of BTBT leakage current in DLT. Our results show that we get significantly low off state current for proposed device (I \(_{on}\) /I \(_{off}\) \(\sim \) 10 \(^{9}\) ). Vacuum incorporation results in higher immunity against BTBT effect, but it has the limitation of low on state current. Therefore we use the dual material gate (DMG) along with vacuum gate dielectric to improve I \(_{on}\) and I \(_{on}\) /I \(_{off}\) ratio. In addition, we also analyze the effect of temperature on band-to-band tunneling current for different DLT structures.