Investigation on Dynamic On-Resistance of GaN Power Devices Using Double Pulse Test

The high electron mobility and wide bandgap of gallium nitride (GaN) material facilitate higher switching frequencies and smaller device sizes of GaN high electron mobility transistors (HEMTs). Now they have gained widespread utilization in power converter applications. However, the presence of impurity defects in the p-GaN structure and at the growth interface of the material poses challenges for p-GaN gate HEMTs, leading to shifts in threshold voltage (VTH) and degradation in on-resistance (RON). This paper presents the construction of a double-pulse test platform to investigate the RON degradation of transistors under different drain stress, load current and stress time. The results indicate that prolonged drain stress leads to an initial increase followed by a decrease in RON for p-GaN HEMTs. A method is proposed for suppressing the RON degradation by adjusting the gate drive voltage of transistors, and the feasibility of adjusting the gate driving voltage to suppress the degradation of RON was verified through experiments.