GaAs Chip-Based 110–170 GHz Full-Band Balanced Multi-anode Frequency Doubler

This article details the design of a balanced frequency doubler operating in the frequency range of 110–170 GHz. Based on the theoretical knowledge related to diodes, the frequency multiplication principle and structure of the balanced frequency multiplier are analyzed. The device is specifically crafted to exhibit a relatively flat output across its entire frequency spectrum. The approach employed in its design involves the utilization of a multi-anode, coupled with a gallium arsenide substrate. This unique combination results in a significant enhancement of the frequency multiplication output power. The HFSS and ADS simulation software were utilized for co-simulation and optimization of the input and output, respectively, including outgoing matching, output transition, and DC bias circuits. Simulation results indicate that when operated with an input power of 400 mW, the device exhibits an overall efficiency exceeding 18%, with a typical output power reaching up to 80 mW. The frequency doubler finds extensive applications in the domains of wireless communication, biomedicine, food detection, object imaging, and other related fields.