Terahertz Direct Modulator Based on Schottky Diode at 660 GHz
摘要
This paper presents a direct modulator operating in the 650 GHz band, designed based on GaAs Schottky diodes with LC resonance conversion and overall resonance. The modulator controls the on/off state of the diode by an external DC bias voltage to manipulate terahertz waves. Simulation indicates limited diode modulation capability in this frequency range, Therefore, microstructures capable of participating in overall resonance were designed, and this overall resonance enhances the control of terahertz waves. Experimental results demonstrate a minimum insertion loss of −8.4 dB and a maximum modulation depth of 5.5 dB within the 640–680 GHz range.