High Isolation Dual-Polarization Independent Modulation Based Anisotropic Structure
摘要
This paper proposes a simulation design of a high isolation dual-polarization modulation metasurface based on anisotropic structures. By placing high electron mobility transistors (HEMTs) at key positions of the anisotropic structure, a dual-polarization modulation metasurface with high isolation is designed and implemented. Simulation results show that the minimum isolation exceeds 88%, and the modulation depth is greater than 45% with a bandwidth of 30 GHz.