High-Performance MAPbI3 Infrared-Terahertz Wave Detector Based on Sulfonated Graphene Oxide Modification

Infrared and terahertz waves contain a wealth of information that can be used effectively in medicine, agronomy and environmental monitoring. Terahertz wave detectors can also be used to detect small changes in semiconductor chips to improve their functional performance. Among many advanced materials such as room-temperature infrared-terahertz wave detectors, perovskites are favored due to their long carrier diffusion distance, low processing cost and large-scale preparation. In this paper, we used sulfonated graphene oxide (s-GO) to modify the grain boundaries of methylaminolead iodide perovskites (MAPbI3) to reduce the obstruction of grain boundary defects to the generation and transport of MAPbI3 photothermal carriers. The s-GO was used to stabilize the grain boundary defects and promote the carrier transport of MAPbI3, so as to improve the responsivity of the s-GO/MAPbI3 bolometer detector to infrared-terahertz waves, so that the current responsivity to 1064 nm infrared light was 47.5 μA/W and the current responsivity to 1.36 mm terahertz light was 0.17 μA/W.