Photoresponse Characteristics of Quantum Ratchet Detectors Grown by MOCVD
摘要
Terahertz detection has important application in space exploration, biomedicine, and national defense security. At present, although terahertz thermal detectors can operate at room temperature, their response speed is relatively slow, and the detection band coverage is narrow. Photon-type terahertz detectors have the potential for high-speed response, and the response band is flexible and adjustable, but their operating temperature is generally low (all working in the liquid helium temperature range). Developing a terahertz detection device with high speed, high sensitivity, high temperature operation, wide band response, simple fabrication process, and relatively low cost has become a focus and frontier issue in terahertz technology research. The quantum ratchet detector proposed by us is expected to achieve high-temperature, high-speed, and broadband terahertz detection. In this paper, we use MOCVD technology for material epitaxial growth and fabricate quantum ratchet detectors. We studied their photoresponse characteristics and ratchet characteristics, and discussed the possibility of high-temperature operation.