Study on the Preparation and Characterization of Si-Based Sputtered PZT Films with the Insertion of LNO Buffer Layer

In recent years, piezoelectric thin films with perovskite-type structure have become extensively employed in MEMS (micro-electro-mechanical systems) as significant constituents in the fabrication of Sensers, microbrakes and piezoelectric energy harvestors. There is an abundance of literature on the design, fabrication and analysis of PZT (Pb(Zr0.52Ti0.48)O3) thin films. The dominant crystalline orientation growth of PZT (001) is difficult to be controlled. In this paper LNO was incorporated as a buffer layer to enhance this orientation growth. Meanwhile, further exploration is required to better understand the insertion of an LNO (LaNiO3) buffer layer for the growth of selectively oriented PZT. More experiments are needed to elucidate the growth mechanism. In this study, we examine the impact of different deposition and annealing temperatures on the preparation of LNO and investigate the growth of PZT utilizing an LNO buffer layer on a Si wafer. In this study, radio frequency magnetron sputtering was used to deposit LNO films on a Pb/Ti/SiO2/Si substrate at different deposition temperatures (D.T.), and then the LNO films were annealed at different annealing temperatures (A.T.). Finally, PZT was sputtered on the LNO films followed by the second PZT annealing. The experimental results demonstrate that the appropriate deposition and annealing temperatures of LNO buffer layer contribute to the pre-dominant crystalline orientation growth of PZT (001) and the reduction of the PZT annealing threshold temperature.