Triple Material Dual Gate Dopingless TFET Biosensor with Symmetrical Gate Structure

The current research defines a dielectrically regulated Triple Gate material dopingless Tunnel Field Effect Transistor (TG-DL-TFET) biological sensor. To detect biological substances such as amino acids (AAs), proteins, and so on, a nanocavity is inserted above the tunneling zone. The P+ and N+ portions are based on the work function of the electrode on the silicon body. Variations in gate material, gate length, and gate electrode thickness are examined to improve b2b (band-to-band) tunneling efficiency during the source-to-channel transition. The suggested structure has impressive sensitivity when it comes to recognizing biomolecules. The sensitivity of neutral biological molecules with higher dielectric constants is reported to be higher at a cavity length of 25 nm; the sensitivity of Gelatin surface potential is discovered to be 3.3 × 1010, which is 15% more than Keratin and 38% more than Bacterophage T7.