The Application of Planar Heterojunction Solar Cells Based on Au/BG/p–Si/Al in Thin Films in the Energy Sector

Low-cost spin coating of p-type silicon substrates enables the fabrication of dye brilliant green (BG)-based devices. In order to achieve the front gold contact, BG thin film is deposited at high vacuum conditions. Various light intensities at room temperature are used to measure current and voltage in the dark. Electrical parameters of BG-based devices are extracted from experimental data, and they describe non-ideal diode behaviors. Using Cheung and Norde approximations and the thermionic emission theory, appropriate electrical parameters are calculated, including ideality factor (n), barrier height (Φb), series resistance (RS), open-circuit voltage (VOC), short-circuit current (I/SC), and interface state density (Dit). Various characteristics of the Au/BG/p–Si/Al heterostructure are discussed at room and dark temperatures, including capacitance–voltage (C–V) and conductance–voltage (G–V). Further, the dark and illumination modes of operation of the diodes are influenced by resistance series and interface states.