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A tunnel FET (TFET) can deliver extremely modest quiescent current (~pA). Minimal ambipolar leakage, restricted subthreshold slope value, and high ION current are a few of the crucial metrics needed to identify TFET features. TFETs have more robust transconductance per bias current than MOSFETs because they undergo a sub-threshold decline of less than 60 mV per decade during the sub-threshold slope process. To gain an overview of different tunnel FET device topologies and their respective accomplishments, this manuscript will be helpful. In order to achieve the intended ION / IOFF, we analyzed and evaluated the outcomes of various TFET device architectures in this article.

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A Survey on Heterostructure Tunnel Field Effect Transistors (H-TFET)

  • 会议论文

  • 发表日期：

    2025年

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  • Pradip Dey,
  • Soumya Sen,
  • Ravi Ranjan,
  • Ashish Raman

摘要

A tunnel FET (TFET) can deliver extremely modest quiescent current (~pA). Minimal ambipolar leakage, restricted subthreshold slope value, and high ION current are a few of the crucial metrics needed to identify TFET features. TFETs have more robust transconductance per bias current than MOSFETs because they undergo a sub-threshold decline of less than 60 mV per decade during the sub-threshold slope process. To gain an overview of different tunnel FET device topologies and their respective accomplishments, this manuscript will be helpful. In order to achieve the intended ION / IOFF, we analyzed and evaluated the outcomes of various TFET device architectures in this article.