Ferroelectric FETs have gained popularity as the coming generation of technology since these can function as a synaptic device enabling neuromorphic application as well as a one transistor (1 T) for higher incorporation. In this article, we will look at the latest developments in ferroelectric field-effect transistors (FeFETs). We deal with fundamental operation principles, material properties, and device structures, with a particular emphasis on the usage of FeFET in nonvolatile memory applications. Cycling endurance, retention, and memory window are all important device performance parameters. We also provide a brief overview of current advancements in alternate FeFET applications such as neuromorphic, in-memory computing, and eFLASH devices.