Sensitivity Analysis of Extended Germanium Source-Vertical Tunnel Field Effect Transistor for Biosensors

This article proposes a novel technique for improving the sensitivity of extended germanium source in ferro oxide biosensors. The biosensor, referred to as Germanium extended source-vertical tunnel field effect transistor (GES-VTFET) vs silicon extended source-vertical tunnel field effect transistor (SES-VTFET) makes use of doped SiGe in the source region to enhance charge carrier mobility and gets over material solubility restrictions by adding an additional negatively biased source electrode. A finer source-channel interface and more driving current are produced in the ON state as a result of the additional source electrode's ability to pull holes from the P + source. The source region also receives an extension of the cavity under the gate electrode, which modifies the device’s electrostatic characteristics.