Impact of High Temperature and Germanium Rate on the Electrical Performance of the SiGe Heterojunction Bipolar Transistor with DPSA-SEG Architecture

The aim of this work is to model and analyze the electrical characteristics of a SiGe Heterojunction Bipolar Transistor HBT integrated in BiCMOS055 technology with DPSA-SEG (Double Poly silicon, Self-Aligned, Selective Epitaxial Growth) architecture, using COMSOL Multiphysic software. The goal is to analyze the impact of high temperatures on component characteristics in the range from 300 to 450 K. At high temperatures, electrical performances decrease considerably, the maximum oscillation frequency/transition frequency drops from 397/334 to 343/268 GHz when the temperature ranges from 300 to 450 K. Secondly, we optimized the impact of the Germanium fraction rate introduced into the SiGe base of the HBT on electrical properties. For Germanium concentration less than 20%, static and dynamic performances improved but these performances decreased when germanium concentration is over 20%.