Design of Vertical Superjunction AlGaN/GaN HEMT: A TCAD-Based Approach

The breakdown voltage (BV) and specific on-resistance (Ron;sp) are always major concerns associated with the devices used for high-power applications. In this work, a novel doping pillar vertical superjunction high electron mobility transistor (DP-SJ HEMT) with composite pillar structure is designed and simulated using TCAD tool. A gradient doping profile of n-pillar structure is carefully chosen to optimize the BV and Ron;sp. The simulated results in terms of transfer characteristics, transconductance, distribution of electric field and ON-state potential profile are also investigated. The BV and Ron;sp of the proposed device are found to be 8.05 kV and 4.0 mΩ cm2 respectively. It provides a reduction of around 5% in Ron;sp and increment of around 78% in maximum drive current when compared with the similar kind of devices in literature.