Dependence of Analog Performance and Linearity with Channel Doping Concentration for an InGaAs MOSFET

For the last few years, Si based devices have been facing difficulties to maintain Moore’s law. To reduce those problems III-V compound semiconductor has been accepted as alternative channel material. Due to better carrier mobilities, InGaAs for n-channel and InGaSb for p-channel are used. In this paper, we investigate the effects of various channel doping concentration values on analog performance, linearity for an InGaAs MOSFET. Analog performance parameters, such as transconductance and voltage gain, are found to be better for lower channel doping concentration values. The linearity metrics, such as voltage intercept points (VIP2 and VIP3), third order intercept point (IIP3), and third-order intermodulation distortion (IMD3), have also been analyzed. Devices having lower channel doping concentrations are found to perform better in terms of linearity.