Numerical Modelling of WO3-Based Memristive System for Neuromorphic Computation

Here, we report a detailed numerical model for a WO3-based memristive system by implementing a new parabolic window function in modified current–voltage (I-V) equation. The proposed model effectively depicts the ideal resistive switching pinched hysteresis loop in I-V characteristics with neuromorphic computing response in terms of potentiation and depression processes. Moreover, the modified I-V relationship is also able to capture the asymmetric resistive switching response in addition to the symmetric nature of the hysteresis loop in the I-V characteristics for both positive and negative voltage cycles. The DC analysis of the memristive device via numerical model is also followed the exact experimental behavior as reported in (Chang et al. in Appl Phys A 102:857–863, 2011 [6]).