A Vertical GaN Split Gate Trench MOSFET Device with Reduced Switching Energy Losses

In this work, the switching characteristics of vertical GaN split-gate trench MOSFET (SGT-MOSFET) have been evaluated using TCAD mixed-mode simulation for the first time. A double-pulse test circuit has been used for analyzing switching losses than that of conventional TG-MOSFET. The simulation results show that the total switching energy loss of SGT-MOSFET has been reduced by around half of that of a conventional TG-MOSFET with a similar current rating due to lower gate-to-drain capacitance and charge. The total power loss of the SGT-MOSFET has been found to be ~ 47% lower than that of TG-MOSFET during switched-on and switched-off. The reduced energy and power loss of SGT-MOSFET would be a good choice for a high efficiency system.