High Speed Etching of Silicon in NaOH-Based Solution
摘要
In this research, the effect of hydroxylamine (NH2OH) on the etching characteristics of sodium hydroxide (NaOH) is investigated. To perform this study, 12% NH2OH is incorporated to 10 M NaOH and the etching characteristics of Si{100}, Si{110} and Si{110} are investigated. The main objective of this research is to improve the etch rate of silicon, which is required to minimize the fabrication time to improve the productivity to reduce the cost of the product.