A Comparative Demonstration of a 2D MXene-Based Asymmetric Memristor Using Pristine and Nanohybrid Ti3C2Tx

This paper demonstrates the experimental comparative study on the asymmetric MXene and MXene/SnS-based memristors using pristine Ti3C2Tx and SnS/Ti3C2Tx nanohybrid. Due to the low ROFF of pristine Ti3C2Tx (~ 26 Ω), the performance (ROFF/RON ratio) of pristine Ti3C2Tx was found to be 2.7. To improve the ROFF of pristine MXene, a nanohybrid of Ti3C2Tx with SnS is investigated, which creates local hetero junctions, thereby increasing the ROFF and hence, the ROFF/RON of SnS/MXene-based memristor. Although pristine Ti3C2Tx offers poor performance in terms of ROFF/RON, and the ION/IOFF ≈ 250 calculated was very high, which can be very useful in analog circuit applications. In contrast, SnS/Ti3C2Tx can be used for memory applications. Furthermore, the switching mechanisms and the asymmetricity of both devices are explained in terms of the conduction bridge mechanism and trapping and de-trapping of the charge carriers. Successful demonstration of novel MXene-based memristors opens up new avenues of research for digital and analog circuit applications.