Stress Dependent Electrical Characteristics of Flexible a-IGZO TFTs

Using computer-aided design technology, the electrical performance of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under mechanical bending stress are examined. In addition, stress/strain distribution in the channel is mapped in multi-layered TFTs. We propose a novel 3D TCAD simulation technique that may provide design guidelines to investigate the bending axis dependency of the transfer characteristics of flexible TFTs.