Effective Mobility Extraction of GaN-HEMT Using S-Parameter

In this paper, we are proposing the extraction of effective mobility of AlGaN/GaN-HEMT. For the extraction process, the scattering-parameters (S-parameters) are used. The two key parameters for effective mobility extraction of a High Electron Mobility Transistor (HEMT) are intrinsic gate-source capacitance C \(_{gs{\_}i}\) and gate-drain capacitance C \(_{gd{\_}i}\) which can be directly extracted from the measured S-parameter using the small-signal equivalent circuit modeling. The effective mobility was extracted for different gate-source voltages (V \(_{gs}\) ). Also the dependence of effective mobility on drain-source voltage (V \(_{ds}\) ) and gate-source voltage (V \(_{gs}\) ) has been studied.