Design of High-Power Power Amplifiers for BDS-3 Terminal Based on InGaP/GaAs HBT MMIC and LGA Technology
摘要
With the development and popularization of Beidou-3 navigation satellite system (BDS-3), to ensure its unique short message function it is necessary to integrate a radio frequency (RF) power amplifier (PA) with high performance. Therefore, in this paper, an L-band high-power 10 W PA chip is designed in InGaP/GaAs heterojunction bipolar transistor (HBT) technology combined with temperature-insensitive adaptive bias technology, class-F harmonic suppression technology, and LGA packaging technology. The linear gain of the PA chip reaches 37.1 dB and P1dB reaches 40.6 dBm. The results show that the PA chip has high power, high gain, and high linearity, which has obvious advantages over similar PA chip designs and can meet the short message functions of the BDS-3 terminals in various application scenarios.