An IGBT Driving Circuit Based on Current Source and Resistance Segmental Control

In order to solve the problems of voltage peak, current peak and power loss in the process of turn on or turn off of high power IGBT, an IGBT driving circuit is presented. The circuit is based on current source and resistance segmental control. When the high-power IGBT works, voltage signal V0 will be generated at both ends of the inductor LEe, after V0 is compared with the positive terminal voltages V+ and V-, high and low levels are generated at the output terminals A and B of the voltage comparator, the high and low levels signal generated by the voltage comparator can control the opening and closing of the switching MOS tube, and then control the resistance Ron, resistance Roff, and the opening and closing of the mirror current source to control the drive circuit, thus the active gate drive (AGD) control is realized. Compared with the conventional gate drive (CGD) circuit, the driver circuit is proposed in this work can not only reduce the voltage and current peak, but also reduce the switching loss of IGBT to a certain extent. Finally, the correctness of the relevant circuit is verified by PSPICE simulation software.