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IGBT Health Monitoring of Traction Converter Based on Self-Excited Short-Circuit Current Function of Drive Circuit

  • Li Zhu,
  • Xin Wang,
  • Jingwen Jia,
  • Guangang Gao,
  • Zhongping Yang,
  • Xianjin Huang

摘要

The aging fault of insulated gate bipolar transistor (IGBT) is mainly reflected in the fracture of bonding wire. The health status of the module can be monitored by short-circuit current. For the traction inverter IGBT module used in urban rail transit, the existing health status monitoring method based on short-circuit current cannot achieve online monitoring or harsh monitoring conditions. Therefore, this paper proposes a health status monitoring method based on self-excited short-circuit drive circuit. The action time and related parameter settings of the self-excited short-circuit condition in the system control process were determined, and the interference of temperature on the monitoring results was eliminated by setting the temperature range. Finally, the relevant test platform is used to extract the parameters of the corresponding IGBT module, and the linear relationship between the collector emitter voltage and temperature at 100 mA low current was obtained and verified. The relationship between the short-circuit current and the temperature change under different health levels was completed for the corresponding IGBT module. The temperature range and the action threshold setting were completed.