Analytic Calculation Method of Power Loss for High Voltage and High Power IGBT Device

Accurate calculation of the power loss of high voltage and high power IGBT devices is of great significance for improving the comprehensive performance of devices in the application process. Based on the analytical model of high-voltage and high-power IGBT devices, according to the generation mechanism of power loss, an analytical calculation method of power loss is proposed, and the analytical expression of power loss generated by IGBT devices in a switching cycle is derived. The correctness of the analytical model of power loss is verified by double pulse experiment.