Effect of Various Structure Parameters on Electrical Characteristics of Double Gate FinFET

In this research work the transfer characteristics of the n-channel double gate fin field-effect transistor (DG FinFET) are optimized for various device geometries. From the I-V characteristics of the DG FinFET structure, the off current (Ioff) is analysed. The effects of fin width, source and drain extension length, gate work function and temperature on the device characteristics are simulated to analyze the performance. The MuGFET simulation tool is employed to perform the simulations of the device. The off current (Ioff) plays, a very important role in leakage current which is one of the important short-channel effects (SCE) in nano-scale devices. In this paper, Ioff is analyzed and optimized using a different device geometry and gate material at different temperatures. It is concluded that the Ioff decreases with the higher gate material work function and lower channel width. Hence, the proposed device performs better in terms of static power dissipation in the nano regime.