Design and Parametric Variation Assessment of Extended Source Double Gate Tunnel Field-Effect Transistor (ESDGTFET) for Enhanced Performance

The Tunnel field-effect transistors (TFETs) leverage quantum tunneling for efficient power consumption and improved switching capabilities. In this paper, we have demonstrated the impact of parametric variation on electrostatics and analog performance of the proposed tunnel field-effect transistor (ESDGTFET) device using Silvaco 2D device simulator. The paper investigates various parameters like threshold voltage, ION/IOFF ratio, drain current, subthreshold swing (SS), transconductance(gm) and cutoff frequency (fT) for different channel lengths and gate dielectric materials. The finding from the investigation reveals that the subthreshold swing (SS) is improved by 49% when the channel length is reduced from 40 to 20nm but no notable changes were observed in threshold voltage. The total capacitance of the device is also improved for a shorter channel length. Furthermore, the on current and SS of the device are improved for HfO2 gate dielectric material as compared to SiO2. For high-k dielectrics, the device’s threshold voltage drops substantially. As a result, the device functions optimally in low-power contexts.