Research on Scale Benefit Development Technology of Tight Gas Horizontal Wells in Ordos Basin

China has abundant tight sandstone gas resources, but reservoir heterogeneity is strong, single well production is low, and effective development is difficult. In order to improve the single well production and reserve utilization of tight sandstone gas, and explore an efficient three-dimensional development model for multiple layers of tight sandstone gas reservoirs, a study was conducted using multiple sets of gas bearing formations such as the He 8 and Shan 1 sections in the tight gas demonstration area of the Sulige gas field in the Ordos Basin as examples. The 3D seismic prediction river channel technology and multi-stage sand body step-by-step fine characterization technology were applied to predict the spatial distribution of reservoirs, targeting different target sand body types and characteristics, Propose various differentiated deployment and design technologies for horizontal wells, and establish a set of three-dimensional development technology system for multi-layer horizontal wells in tight sandstone gas reservoirs. Firstly, based on the characteristics of tight reservoirs, precise characterization of the spatial distribution of sand bodies in each small layer and evaluation of favorable gas bearing areas are carried out using 3D geological modeling and 3D seismic data; Secondly, select the main horizontal well development layers and implement favorable areas for horizontal well deployment, and carry out multi-layer and three-dimensional horizontal well development; Thirdly, the application of geological seismic comprehensive horizontal well geological guidance technology has effectively improved the drilling rate of gas reservoirs. Based on this technology development system, the gas drilling rate of multi-layer horizontal wells has been increased by more than 10%, and the production of gas testing wellhead has been increased by more than 20%, achieving economies of scale development of tight gas reservoirs.